SMD Type
IC
Product specification
2SC2736
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
+0.1
1.3
-0.1
Features
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
30
20
3
50
150
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector to emitter saturation voltage
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Symbol
Testconditons
Min
30
20
3
500
0.7
30
200
1.0
1400
2200
22.5
10
4.0
300
200
pF
MHz
dB
dB
dB
mV
mV
Typ
Max
Unit
V
V
V
nA
V
V
(BR)CBO
I
C
= 10ìA , I
E
= 0
V
(BR)CEO
I
C
= 1mA , R
BE
=
V
(BR)EBO
I
E
= 10ìA , I
C
= 0
I
CBO
V
CB
= 15V, I
C
= 0
V
CE(sat)
I
C
= 10 mA, I
B
= 5 mA
h
FE
C
ob
f
T
CG1
V
CE
= 10 V, I
C
= 5 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CE
= 10 V, I
C
= 5 MA
V
CC
= 12 V, I
C
= 2 mA,f = 200 MHz, f
OSC
= 230 MHz (0dBm)
V
CC
= 12 V, IC = 2 mA,f = 900 MHz,
f
OSC
= 930 MHz (0dBm),fOut = 30 MHz
V
CC
= 12 V, I
C
= 2 mA, f = 200 MHz,
f
OSC
= 230 MHz (0dBm)
V
CC
= 12 V, I
C
= 7 mA, f = 300 MHz
V
CC
= 12 V, I
C
= 7 mA, f
OSC
= 930 MHz
Conversion gain
CG2
Noise figure
Oscillating output voltage
NF
V
OSC1
V
OSC2
Marking
Marking
TC
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0-0.1
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TYSEMI [ TY Semiconductor Co., Ltd ]
