SMD Type
Transistors
Diodes
IC
Product specification
2SC2734
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
UHF frequency converter
+0.1
1.3
-0.1
Features
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
20
11
3
50
150
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector to emitter saturation voltage
DC current gain
Collector output capacitance
Conversion gain
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
Testconditons
I
C
= 10ìA , I
E
= 0
I
C
= 1mA , R
BE
=
I
E
= 10ìA , I
C
= 0
V
CB
= 10V, I
C
= 0
Min
20
11
3
0.5
0.7
20
90
0.9
15
200
1.5
pF
dB
Typ
Max
Unit
V
V
V
A
V
V
CE(sat)
I
C
= 10 mA, I
B
= 5 mA
h
FE
C
ob
CG
V
CE
= 10 V, I
C
= 5 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CC
= 6 V, I
C
= 2 mA,f = 900 MHz,
f
osc
= 930 MHz (0dBm) ,f = 30 MHz
V
CC
= 6 V, I
C
= 2 mA, f = 900 MHz,
f
osc
= 930 MHz (0dBm) , f
out
= 30 MHz
V
CC
= 6 V, I
C
= 5 mA, f = 930 MHz
V
CE
= 10 V, I
C
= 10 mA
1.4
Noise figure
Oscillating output voltage
Transition frequency
NF
V
OSC
f
T
9
140
3.5
+0.1
0.38
-0.1
0-0.1
dB
mV
GHz
Marking
Marking
GC
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TYSEMI [ TY Semiconductor Co., Ltd ]
