Product specification
2SC2716
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
Features
+0.1
2.4
-0.1
Low noise figure: NF = 3.5dB (max) (f = 1 MHz).
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
Tj
T
stg
Rating
35
30
4
100
-100
150
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Collector-base time constant
Power gain
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 20 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
V
CE
= 12 V, I
C
= 2 mA
40
Min
Typ
Max
0.1
1.0
240
0.4
1.0
80
120
2.2
30
2.0
3.0
50
3.5
V
V
MHz
pF
ps
dB
Unit
ìA
ìA
V
CE (sat)
I
C
= 10 mA, I
B
= 1 mA
V
BE (sat)
I
C
= 10 mA, I
B
= 1 mA
f
T
C
ob
V
CE
= 10V, I
C
= 2 mA
V
CB
= 10V, I
E
= 0 , f = 1 MHz
Cc.rbb' V
CE
= 10V, I
E
= -1 mA , f = 30 MHz
Gpe
V
CC
= 10V, I
E
= -1 mA , f = 1 MHz,
Rg=50Ù
h
FE
Classification
Marking
hFE
FR
40 80
FO
70 140
FY
120 240
0-0.1
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TYSEMI [ TY Semiconductor Co., Ltd ]
