Product specification
2SC1622A
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
High DC current gain.
+0.1
1.3
-0.1
Features
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
120
120
5
50
200
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulse test: tp
350 ìs; d
0.02.
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 120V, I
E
=0
V
EB
= 5V, I
C
=0
V
CE
=6V , I
C
= 1mA
V
CE
=6V , I
C
= 0.1mA
V
CE(sat)
I
C
= 10mA , I
B
= 1mA
V
BE
f
T
C
ob
V
CE
= 6V , I
C
= 1mA
V
CE
= 6V , I
E
= -1mA
V
CB
= 30V , I
E
= 0 , f = 1.0MHz
0.55
50
135
100
0.07
0.58
110
1.6
2.5
0.30
0.65
V
V
MHz
pF
500
Min
Typ
Max
0.05
0.05
900
Unit
ìA
ìA
h
FE
Classification
Marking
hFE
D15
135 270
D16
200 400
D17
300 600
D18
450 900
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
+0.1
0.38
-0.1
0-0.1
1 of 1
TYSEMI [ TY Semiconductor Co., Ltd ]
