Product specification
2SB962-Z
TO-252
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
Features
Low V
CE(sat)
: V
CE(sat)
=-0.3V.
+0.15
1.50
-0.15
6.50
+0.2
5.30
-0.2
+0.15
-0.15
+0.2
9.70
-0.2
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current pulse *
Total power dissipation
Junction temperature
Storage temperature range
* PW
10ms,duty cycle 50%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Rating
-40
-30
-5
-3
-6
2
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW
350 µs, duty cycle
2%
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= -30 V, I
E
= 0
V
EB
= -3.0 V, I
C
= 0
V
CE
= -2.0 V, I
C
= -1A
V
CE
= -2.0 V, I
C
=-20mA
V
CE(sat)
I
C
= -2A, I
B
= -0.2A
V
BE(sat)
I
C
= -2A, I
B
= -0.2A
f
T
C
ob
V
CE
= -5.0 V, I
E
= 100mA
V
CB
= -10 V, I
E
= 0 , f = 1.0 MHz
60
30
160
150
-0.3
-1
80
55
-0.5
-2
V
V
MHz
pF
Min
Typ
Max
-10
-1
400
Unit
µA
µA
h
FE
Classification
Rank
h
FE
R
60 120
Q
100 200
P
160 320
E
200 400
3
.8
0
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TYSEMI [ TY Semiconductor Co., Ltd ]
