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2SB956 参数 Datasheet PDF下载

2SB956图片预览
型号: 2SB956
PDF下载: 下载PDF文件 查看货源
内容描述: 大集电极耗散功率PC低集电极 - 发射极饱和电压VCE (SAT) [Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat)]
分类和应用: PC
文件页数/大小: 1 页 / 76 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
   
Product specification
2SB956
Features
Large collector power dissipation PC
Low collector-emitter saturation voltage V
CE(sat)
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
-20
-20
-5
-1
-2
1
150
-55 to +150
Unit
V
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
* Pulse measurement.
3
Symbol
V
CBO
V
EBO
I
CBO
h
FE
Testconditons
I
C
= -1 mA, I
B
= 0
I
E
= -10 ìA, I
C
= 0
V
CB
= -10 V, I
E
= 0
V
CE
= -2 V, I
C
= -500 mA
130
Min
-20
-5
-1
280
-0.5
-1.2
200
40
V
V
MHz
pF
Typ
Max
Unit
V
V
nA
V
CE(sat)
I
C
= -1 A, I
B
= -50 mA
V
BE(sat)
I
C
= -500 mA, I
B
= -50 mA
f
T
C
ob
V
CB
= -6 V, I
E
= 50 mA, f = 200 MHz
V
CB
= -6 V, I
E
= 0, f = 1 MHz
h
FE
Classification
Marking
h
FE
HR
130 210
HS
180 280
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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