Product specification
2SB798
Features
World standard miniature package:SOT-89
Low collector saturation voltage:V
CE(sat)
<-0.4V(I
C
=-1.0A,I
B
=-100mA)
Excellent DC Current Gain Linearity:h
FE
=100TYP.(V
CE
=-10.V,I
C
=-1.0A)
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current(Pulse) *
Total power dissipation
Junction temperature
Storage temperature range
* PW
10ms,duty cycle 50%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
T
T
j
T
stg
Rating
-30
-25
-5
-1
1.5
2
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW
350 ìs, duty cycle
2%
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= -30 V, I
E
= 0
V
EB
= -5.0 V, I
C
= 0
V
CE
= -1.0 V, I
C
= -100 mA
V
CE
= -1.0 V, I
C
= -1.0A
V
CE(sat)
I
C
= -1A, I
B
= -0.1A
V
BE(sat)
I
C
= -1A, I
B
= -0.1A
V
BE
f
T
C
ob
V
CE
= -6.0 V, I
C
= -10 mA
V
CE
= -6.0 V, I
E
= 10 mA
V
CB
= -6.0 V, I
E
= 0 , f = 1.0 MHz
-600
90
50
200
100
-0.25
-1.0
-640
110
36
-0.4
-1.2
-700
V
V
mV
MHz
pF
Min
Typ
Max
-100
-100
400
Unit
nA
nA
h
FE
Classification
Marking
h
FE
DM
90 180
DL
135 270
DK
200 400
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
