DIP
Type
SMD Type
DIP
Type
SMDType
Transistor
IC
Transistors
IC
Transistor
Product specification
2SB649A
Features
Collector-Emitter Voltage :-160V
Collector Current :-1.5A
1 Emitter
2 Collector
3 Base
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
-180
-160
-5
-1.5
1
150
-55to +150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-Emitter Voltage
DC current gain
Output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
C
=-1mA, I
E
=0
I
C
=-10mA, R
BE
=
I
E
=-1mA, I
C
=0
V
CB
=-160V
I
E
=0
Testconditons
Min
-180
-160
-5
-10
-1
-1.5
60
30
27
140
pF
MHz
200
Typ
Max
Unit
V
V
V
A
V
V
V
CE(sat)
I
C
=-600mA,I
B
=-50mA
V
BE
h
FE
C
ob
f
T
V
CE
=5V, I
C
=150mA
V
CE
=-5V,I
C
=-150mA
V
CE
=-5V,I
C
=-500mA
V
CB
= -10 V, I
E
= 0, f = 1 MHz
V
CE
=-5V, I
C
=-0.15A
h
FE
Classification
Rank
h
FE
B
60 to 120
C
100 to 200
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TYSEMI [ TY Semiconductor Co., Ltd ]
