Product specification
2SB1643
TO-252
+0.15
1.50
-0.15
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
Features
High collector to emitter V
CEO.
+0.2
9.70
-0.2
6.50
+0.2
5.30
-0.2
+0.15
-0.15
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Collector power dissipation
T
C
= 25
Ta = 25
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
Rating
-60
-60
-6
-3
-6
-1
40
1.3
150
-55 to +150
Unit
V
V
V
A
A
A
W
W
Electrical Characteristics Ta = 25
Parameter
Collector-base cutoff curent
Collector-emitter cutoff curent
Emitter-base cutoff current
Collector-emitter voltage
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE
Testconditons
V
CB
= -60 V,I
E
= 0
V
EB
= -40 V,I
C
= 0
V
EB
= -6 V, I
C
= 0
I
C
= -25 mA, I
B
= 0
V
CE
= -4 V, I
C
= -0.5 A
-60
300
700
-1
30
V
MHz
Min
Typ
Max
-100
-100
-100
Unit
ìA
ìA
ìA
V
V
CE(sat)
I
C
= -2 A, I
B
= -0.05 A
f
T
V
CE
= -12 V, I
C
= -0.2 A , f = 10 MHz
h
FE
Classification
Rank
h
FE
Q
300 500
P
400 700
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
3
.8
0
High collector power dissipation P
C.
1 of 1
TYSEMI [ TY Semiconductor Co., Ltd ]
