Product specification
2SB1571
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Symbol
ICBO
Testconditons
VCB = -50 V, IE = 0
Min
Typ
Max
-100
-100
Unit
nA
IEBO
VEB = -6.0 V, IC = 0
nA
hFE1
hFE2
VBE
VCE = -1.0 V, IC = -1.0 A
VCE = -1.0 V, IC = -2.0 A
VCE = -1.0 V, IC = -0.1 A
80
DC Current Gain *
100
200
400
Base to Emitter Voltage *
Collector Saturation Voltage *
Collector Saturation Voltage *
Base Saturation Voltage *
Gain Bandwidth Product
Output Capacitance
Turn-on Time
-0.6 -0.665 -0.7
-0.17 -0.35
V
V
VCE(sat)1 IC = -3.0 A, IB = -0.15 A
VCE(sat)2 IC = -5.0 A, IB = -0.25 A
VBE(sat) IC = -3.0 A, IB = -0.15 A
-0.28 -0.55
V
-0.89
150
100
265
350
50
-1.2
V
fT
Cob
ton
tstg
tf
VCE = -10 V, IE = 0.5 A
MHz
pF
ns
ns
ns
VCB = -10 V, IE = 0, f = 1.0 MHz
IC = -2.0 A, VCC = -10 V,RL = 5.0Ù, IB1
= -IB2 = -0.1 A,
Storage Time
Fall Time
* Pulsed: PW
350 ìs, Duty Cycle
2%.
hFE Classification
Marking
hFE
HX
100 200
HY
160 320
HZ
200 400
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TYSEMI [ TY Semiconductor Co., Ltd ]
