Product specification
2SB1561
-Q
SOT-89
Unit: mm
+0.1
1.50
-0.1
■
Features
●
Collector Current Capability I
C
=-2A
+0.1
4.50
-0.1
+0.1
1.80
-0.1
+0.1
2.50
-0.1
●
Collector Emitter Voltage V
CEO
=-60V
●
Low saturation Voltage typically
VCE (SAT)=-0.15Vat IC/IB=-1A/-50mA
1
+0.1
0.48
-0.1
2
3
+0.1
0.80
-0.1
+0.1
0.53
-0.1
+0.1
0.44
-0.1
+0.1
0.40
-0.1
+0.1
2.60
-0.1
+0.1
4.00
-0.1
+0.1
3.00
-0.1
1. Base
1
1. Source
Base
2
2. Drain
Collector
2. Collector
3 Emitter
3. Emiitter
3. Gate
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C P
Collector Power Dissipation
Junction Temperature
Storage Temperature range
P
C
P
CM
T
J
T
s tg
Rating
-60
-60
-6
-0.5
-6
0.5
2
150
-55 to 150
℃
W
A
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collecto- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emittercut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
Testconditons
Ic= -50 µA
，
I
E
=0
Ic= -1 mA
，
I
B
=0
I
E
= -50
μ
A
，
I
C
=0
V
CB
= -50 V , I
E
=0
V
CB
= -48 V , I
E
=0
V
EB
= -5V , I
C
=0
-0.15
Min
-60
-60
-6
-100
-700
-100
-0.35
-1.2
120
45
23
200
pF
MHz
270
V
nA
V
Typ
Max
Unit
V
CE(sat)
I
C
=-1A, I
B
=-50mA
V
BE(s at)
I
C
=-1A, I
B
=-50mA
h
F E(1)
h
F E(2)
Cob
f
T
V
CE
= -2V, I
C
= -0.5A
V
CE
=- 2V, I
C
= -1.5A
V
CB
= -10V, I
E
= 0A,f=1MHz
V
CE
= -2V, I
E
= -0.5A,f=100MHz
■
Marking
Marking
BL/QN
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 3
TYSEMI [ TY Semiconductor Co., Ltd ]
