Product specification
2SB1475
Features
Super miniature package.
High DC current I
C(DC)
=500mA max.
Low V
CE(sat)
: V
CE(sat)
=-60mV at -100mA
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
-25
-16
-6
-500
150
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW
350 µs, duty cycle
2%
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
Testconditons
V
CB
= -16 V, I
E
= 0
V
EB
= -6.0 V, I
C
= 0
V
CE
= -1.0 V, I
C
= -100 mA
I
C
= -100 mA, I
B
= -10 mA
I
C
= -500 mA, I
B
= -20 mA
V
BE(sat)
I
C
= -2A, I
B
= -0.1A
V
BE
f
T
C
ob
V
CE
= -1.0 V, I
C
= -10 mA
V
CE
= -3.0 V, I
E
= 100 mA
V
CB
= -10 V, I
E
= 0 , f = 1.0 MHz
50
15
110
200
-60
-250
-0.95
-0.66
Min
Typ
Max
-100
-100
400
-120
-400
-1.2
-0.7
mV
mV
V
V
MHz
pF
Unit
nA
nA
h
FE
Classification
Marking
h
FE
B42
110 240
B43
190 320
B44
270 400
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sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
