Product specification
2SB1443
Features
Low saturation voltage. V
CE (sat)
= -0.35V (Max.) at I
C
/ I
B
= -1A / -50mA.
Excellent DC current gain characteristics.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
*1 Single pulse Pw=10ms.
*2 Printed circuit board 1.7mm thick, collector plating 1cm
2
or larger.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*1
P
C
*2
T
j
T
stg
Rating
-50
-50
-6
-2
-5
1
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltae
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
Ic
BO
I
EBO
h
FE
I
C
= -50ìA
I
C
= -1mA
I
E
= -50ìA
V
CB
= -50V
V
EB
= -5V
V
CE
=-2V, I
C
= -0.5A
120
Testconditons
Min
-50
-50
-6
-0.1
-0.1
270
-0.15 -0.35
36
200
V
pF
MHz
Typ
Max
Unit
V
V
V
A
A
V
CE(sat)
I
C
/I
B
= -1A/ -50mA
C
ob
f
T
V
CB
= -10V, I
E
=0A, f=1MHz
V
CE
= -2V, I
E
=0.5A, f=100MHz
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TYSEMI [ TY Semiconductor Co., Ltd ]
