Product specification
2SB1397
Features
Low saturation voltage.
Contains diode between collector and emitter.
Contains bias resistance between base and emitter.
Large current capacity.
Small-sized package making it easy to provide highdensity,
small-sized hybrid ICs.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
* Mounted on ceramic board (250mm
2
X0.8mm)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
*
T
j
T
stg
Rating
-25
-20
-6
-2
-4
1.3
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Collector-to-emitter breakdown voltage
Diode forward voltage
Base-emitter resistance
Symbol
I
CBO
h
FE
f
T
C
ob
V
CE(sat)
V
BE(sat)
V
(BR)CBO
V
(BR)CEO1
V
(BR)CEO2
V
F
R
BE
Testconditons
V
CB
= -20V , I
E
= 0
V
CE
= -2V , I
C
= -0.5A
V
CE
= -2V , I
C
= -2A
V
CE
= -2V , I
C
= -0.5A
V
CB
= -10V , f = 1MHz
I
C
= -1A , I
B
= -50mA
I
C
= -1A , I
B
= -50mA
I
C
= -10ìA , I
E
= 0
I
C
= -10ìA , R
BE
=
I
C
= -10mA , R
BE
=
I
F
=0.5A
1.6
-25
-25
-20
-1.5
V
KÙ
70
50
300
40
-0.25
-0.5
-1.5
MHz
pF
V
V
V
V
Min
Typ
Max
-1
Unit
nA
Marking
Marking
BP
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TYSEMI [ TY Semiconductor Co., Ltd ]
