Product specification
2SB1396
Features
Adoption of FBET,MBIT processes
Large current capacity
Low collector to emitter saturation voltage
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (Pulse)
Collector dissipation *
Junction temperature
Storage temperature
* Mounted on ceramic PCB (250mm
2
X0.8mm)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
*
T
j
T
stg
Rating
-15
-10
-7
-3
-5
1.3
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
V
CE(sat)
V
BE(sat)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Testconditons
V
CB
= -12V, I
E
=0
V
EB
= -6V, I
C
=0
V
CE
=-2V , I
C
= -0.5A
V
CE
=-2V , I
C
= -3A
V
CE
=-2V , I
C
= -0.3A
V
CE
= -10V , f=1MHz
I
C
=-1.5A,I
B
=-30mA
I
C
=-1.5A,I
B
=-30mA
I
C
=-10ìA,I
E
=0
I
C
=-1mA,R
BE
=
I
E
=-10ìA,I
C
=0
-15
-10
-7
140
70
400
26
-220
-0.9
-400
-1.2
GHz
pF
mV
V
V
V
V
Min
Typ
Max
-100
-100
560
Unit
ìA
ìA
h
FE
Classification
Marking
Rank
hFE
S
140 280
BO
T
200 400
U
280 560
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sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
