SMD Type
Transistors
Product specification
2SB1394
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter on state voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Collector-to-emitter breakdown voltage
Diode forward voltage
Base-emitter resistance
Base resistance
Symbol
I
CBO
h
FE
f
T
C
ob
Testconditons
V
CB
= -30V , I
E
= 0
V
CE
= -2V , I
C
= -0.5A
V
CE
= -2V , I
C
= -2A
V
CE
= -2V , I
C
= -0.5A
V
CB
= -10V , f = 1MHz
70
50
100
55
-0.18
-0.7
-40
-40
-30
-1.5
0.8
60
90
120
V
KÙ
Ù
-1.5
-0.4
-4
MHz
pF
V
V
V
V
Min
Typ
Max
-1
Unit
ìA
V
CE(sat)
I
C
= -1A , I
B
= -50mA
V
BE(ON)
V
CE
= -2V , I
C
= -1A
V
(BR)CBO
I
C
= -10ìA , I
E
= 0
V
(BR)CEO1
I
C
= -10ìA , R
BE
=
V
(BR)CEO2
I
C
= -10mA , R
BE
=
V
F
R
BE
R1
I
F
=0.5A
Marking
Marking
BN
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TYSEMI [ TY Semiconductor Co., Ltd ]
