Product specification
2SB1302
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
IEBO
hFE
Testconditons
VCB = -20V , IE = 0
Min
100
Typ
Max
-500
-500
400
Unit
nA
Collector cutoff current
Emitter cutoff current
VEB = -4V , IE = 0
nA
DC current Gain
VCE = -2V , IC = -500mA
VCE = -5V , IC = -200mA
VCB = -10V , f = 1MHz
Gain bandwidth product
fT
320
60
MHz
pF
V
Output capacitance
Cob
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
VCE(sat) IC = -3A , IB = -60mA
VBE(sat) IC = -3A , IB = -60mA
V(BR)CBO IC = -10ìA , IE = 0
-250 -500
-1
-1.3
V
-25
-20
-5
V
V(BR)CEO
V
IC = -1mA , RBE =
V(BR)EBO IE = -10ìA , IC = 0
Turn-on time
Storage time
Fall time
ton
40
200
10
ns
ns
ns
tstg
tf
hFE Classification
BJ
Marking
Rank
R
S
T
hFE
100 200
140 280
200 400
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4008-318-123
TYSEMI [ TY Semiconductor Co., Ltd ]
