Product specification
2SB1219
Features
Large collector current I
C
.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Rating
-30
-25
-5
-1
-500
150
150
-55 to +150
Unit
V
V
V
A
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE
Testconditons
I
C
= -10 µA, I
E
= 0
I
C
= -2 mA, I
B
= 0
I
E
= -10 µA, I
C
= 0
V
CB
= -20 V, I
E
= 0
V
CE
= -10 V, I
C
= -150 mA
85
-0.35
-1.1
200
6
15
Min
-30
-25
-5
-0.1
340
-0.6
-1.5
MHz
pF
V
Typ
Max
Unit
V
V
V
ìA
V
CE(sat)
I
C
= -300 mA, I
B
= -30 mA
V
BE(sat)
I
C
= -300 mA, I
B
= -30 mA
f
T
C
ob
V
CB
= -10 V, I
E
= 50 mA, f = 200 MHz
V
CB
= -10 V, I
E
= 0, f = 1 MHz
h
FE
Classification
Marking
h
FE
CQ
85 170
CR
120 240
CS
170 340
C
85 340
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TYSEMI [ TY Semiconductor Co., Ltd ]
