Product specification
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Turn-on time
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
Testconditons
V
CB
= -50V , I
E
= 0
V
EB
= -4V , I
C
= 0
V
CE
= -2V , I
C
= -100mA
V
CE
= -2V , I
C
= -1.5A
V
CE
= -10V , I
C
= -50mA
V
CB
= -10V , f = 1MHz
100
40
150
22
-0.3
-0.9
-60
-50
-6
60
Min
Typ
2SB1201
Max
-100
-100
560
Unit
nA
nA
MHz
pF
-0.7
-1.2
V
V
V
V
V
ns
V
CE(sat)
I
C
= -1A , I
B
= -50mA
V
BE(sat)
I
C
= -1A , I
B
= -50mA
V
(BR)CBO
I
C
= -10ìA , I
E
= 0
V
(BR)CEO
I
C
= -1mA , R
BE
=
V
(BR)EBO
I
E
= -10ìA , I
C
= 0
t
on
Storage time
t
stg
450
ns
Fall time
t
f
30
ns
h
FE
Classification
Rank
hFE
100
R
200
140
S
280
200
T
400
280
U
560
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
