Product specification
2SB1198K
SOT-23
Unit: mm
■
Features
●
Low V
CE(sat)
.V
CE(sat)
=-0.2V
+0.1
2.4
-0.1
+0.1
2.9
-0.1
+0.1
0.4
-0.1
●
High berakdown voltage.
BVC EO=-80V
+0.1
1.3
-0.1
V
CE(sat)
=-0.2V
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
s tg
Rating
-80
-80
-5
-0.5
0.2
150
-55 to 150
A
W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collecto- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
Testconditons
Ic= -50 µA
，
I
E
=0
Ic= -2 mA
，
I
B
=0
I
E
= -50
μ
A
，
I
C
=0
V
CB
= -50 V , I
E
=0
V
EB
= -4V , I
C
=0
V
CE
= -3V, I
C
= -100mA
120
-0.2
11
180
Min
-80
-80
-5
-0.5
-0.5
390
-0.5
V
P
F
Typ
0-0.1
Max
Unit
V
uA
V
CE(sat)
I
C
=-0.5A, I
B
=-50mA
Cob
f
T
V
CB
= ?10V, I
E
=0mA, f=1MHz
V
CE
= -10V, I
E
= 50mA,f=100MHz
MHz
■
Classification of h
fe(1)
Rank
hFE
Q
120-270
R
180-390
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TYSEMI [ TY Semiconductor Co., Ltd ]
