SMD Type
Transistors
IC
Product specification
2SB1125
Features
High DC Current gain.
Large Current Capaity and wie ASO
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
-80
-50
-10
-0.7
-2
500
150
-55 to +150
Unit
V
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current Gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Output capacitance
Gain bandwidth product
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
Testconditons
I
C
= -10 A , I
E
= 0
I
C
= -1mA , R
BE
=
I
E
= -10ìA , I
C
= 0
V
CB
= -40V , I
E
= 0
V
CB
= -8V , I
E
= 0
V
CE
= -2V , I
C
= -50mA
V
CE
= -2V , I
C
= -500mA
V
CE(sat)
I
C
= -100mA , I
B
= -0.1mA
V
BE(sat)
I
C
= -100mA , I
B
= -0.1mA
C
ob
f
T
V
CB
= -10V , f = 1MHz
V
CE
= -5V , I
C
= -50mA
5000
3000
-0.8
-1.3
18
200
-1.2
-2.0
V
V
pF
MHz
Min
-80
-50
-10
-100
-100
Typ
Max
Unit
V
V
V
nA
nA
Marking
Marking
BH
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TYSEMI [ TY Semiconductor Co., Ltd ]
