欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SB1073 参数 Datasheet PDF下载

2SB1073图片预览
型号: 2SB1073
PDF下载: 下载PDF文件 查看货源
内容描述: 低集电极 - 发射极饱和电压VCE ( sat)的大峰值集电极电流ICP [Low collector-emitter saturation voltage VCE(sat) Large peak collector current ICP]
分类和应用: 晶体晶体管光电二极管放大器
文件页数/大小: 1 页 / 75 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
   
Product specification
2SB1073
Features
Low collector-emitter saturation voltage VCE(sat)
Large peak collector current ICP
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Rating
-30
-20
-7
-4
-7
1
150
-55 to +150
Unit
V
V
V
A
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Emitter-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
Testconditons
I
C
= -10 ìA, I
E
= 0
I
C
= -1 mA, I
B
= 0
I
E
= -10 ìA, I
C
= 0
V
CB
= -30 V, I
E
= 0
V
EB
= -7 V, I
C
= 0
V
CE
= -2 V, I
C
= -2 A
120
-0.6
120
4
Min
-30
-20
-7
-0.1
-0.1
315
-1.0
V
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
CE(sat)
I
C
= -3 A, I
B
= - 0.1 A
f
T
C
ob
V
CB
= -6 V, I
E
= 50 mA, f = 200 MHz
V
CB
= -20 V, I
E
= 0, f = 1 MHz
h
FE
Classification
Marking
h
FE
IP
120 205
IQ
180 315
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 1