Product specification
2SB1026
Features
Low frequency power amplifier
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
*1 PW
10 ms, Duty cycle
20%
Symbol
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
*1
P
C
*2
T
j
T
stg
Rating
-120
-100
-5
-1
-2
1
150
-55 to 150
Unit
V
V
V
A
A
W
*2 Value on the alumina ceramic board (12.5X 20X 0.7 mm)
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
V
CE(sat)
V
BE
fT
Cob
Testconditons
I
C
= -10 ìA, I
E
= 0
I
C
= -1 mA, R
BE
=
I
E
= -10 ìA, I
C
= 0
V
CB
= -100 V, I
E
= 0
V
CE
= -5 V, I
C
= -150mA,
V
CE
= -5 V, I
C
= -500mA
I
C
= -0.5 A, I
B
= -50 mA,
V
CE
= -5 V, I
C
= -150mA,
V
CE
= -5 V, I
C
= -150 mA
V
CB
= -10 V, I
E
= 0,f = 1 MHz
140
20
60
30
-1.0
-0.9
V
V
MHz
pF
Min
-120
-100
-5
-10
200
Typ
Max
Unit
V
V
V
ìA
h
FE
Classification
Marking
hFE
DL
60 to 120
DM
100 to 200
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
