Product specification
2SA2071
■
Features
●
High speed switching. (T
f
: Typ. : 20ns at I
C
= - 3A)
●
Low saturation voltage, typically
(Typ. : -2 00mV at IC = -2A, IB = -0.2A)
●
Strong discharge power for inductive load and
capacitance load.
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C P
P
C
T
J
T
s tg
Rating
-60
-60
-6
-3
-6
0.5
150
-55 to 150
W
℃
A
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collecto- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
Testconditons
Ic= -100 µA
，
I
E
=0
Ic= -1 mA
，
I
B
=0
I
E
= -100
μ
A
，
I
C
=0
V
CB
= -40 V , I
E
=0
V
EB
= -4V , I
C
=0
V
CE
= -2V, I
C
= -100mA
120
-0.2
50
180
Min
-60
-60
-6
-1.0
-1.0
390
-0.5
V
P
F
Typ
Max
Unit
V
uA
V
CE(sat)
I
C
=-2A, I
B
=-200mA
Cob
f
T
V
CB
= -10V, I
E
=0mA, f=1MHz
V
CE
= -10V, I
E
= 10mA,f=10MHz
MHz
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TYSEMI [ TY Semiconductor Co., Ltd ]
