SMD Type
Transistors
Product specification
2SA1923
Electrical Characteristics Ta = 25
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Collector-to-Emitter Breakdown Voltage
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Switching Time Turn-on Time
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
ton
Testconditons
V
CB
=-400V, I
E
=0
V
EB
=-7V, I
C
=0
I
C
=-10mA, I
B
=0
V
CE
=-5V, I
C
=-20mA
V
CE
=-5V, I
C
=-100mA
I
C
=-100mA, I
B
=-10mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-5V, I
C
=-50mA
V
CB
=-10V, f=1MHz,I
E
=0
-400
140
140
-0.4
-0.76
35
18
0.2
450
400
-1.0
-0.9
V
V
MHz
pF
ìs
Min
Typ
Max
-10
-1
Unit
ìA
ìA
V
Switching Time Storage Time
tstg
2.3
ìs
Switching Time Fall Time
tf
0.2
ìs
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
