SMD Type
IC
Product specification
2SA1898
Electrical Characteristics Ta = 25
Parameter
Symbol
IcBO
IEBO
hFE
Testconditons
VCB = -12V , IE = 0
Min
Typ
Max
-1
Unit
nA
Collector cutoff current
Emitter cutoff current
VEB = -3V , IC = 0
-1
nA
DC current Gain
VCE = -2V , IC = -0.5A
VCE = -2V , IC = -0.3A
VCB = -10V , f = 1MHz
100
280
Gain bandwidth product
fT
300
28
MHz
pF
mV
V
Common base output capacitance
Collector-to-emitter saturation voltage
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Cob
VCE(sat) IC = -1.5A , IB =-75mA
VBE(sat) IC = -1.5A , IB =-75mA
V(BR)CBO IC = -10ìA , IE = 0
-0.25 -0.5
-0.95 -1.2
-15
-15
-5
V
V(BR)CEO
V
IC = -1mA , RBE =
V(BR)EBO IE = -10ìA , IC = 0
V
Turn-on time
Storage time
Turn-off time
ton
30
60
ns
ns
ns
tstg
toff
100
120
200
220
hFE Classification
AN
Marking
Rank
R
S
hFE
100 200
140 280
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TYSEMI [ TY Semiconductor Co., Ltd ]
