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2SA1875 参数 Datasheet PDF下载

2SA1875图片预览
型号: 2SA1875
PDF下载: 下载PDF文件 查看货源
内容描述: 高的fT : FT = 400MHz的(典型值) 。高击穿电压: 200V VCEO (分钟) 。 [High fT : fT=400MHz(typ). High breakdown voltage : VCEO 200V(min).]
分类和应用:
文件页数/大小: 2 页 / 109 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
 浏览型号2SA1875的Datasheet PDF文件第1页  
IC  
Product specification  
2SA1875  
Electrical Characteristics Ta = 25 unless otherwise stated  
Parameter  
Collector Cutoff Current  
Emitter Cutoff Current  
Symbol  
ICBO  
Testconditons  
VCB=-150V, IE=0  
Min  
Typ  
Max  
-0.1  
-1.0  
320  
Unit  
ìA  
IEBO  
VEB=-2V, IC=0  
ìA  
VCE=-10V, IC=-50mA  
VCE=-10V, IC=-250mA  
VCE=-10V, IC=-100mA  
VCB=-30V, f=1MHz  
VCB=-30V, f=1MHz  
IC=-50mA, IB=-5mA  
IC=-50mA, IB=-5mA  
IC=-10ìA, IE=0  
60  
20  
DC Current Gain  
hFE  
Gain-Bandwidth Product  
fT  
400  
5.0  
4.2  
MHz  
pF  
pF  
V
Output Capacitance  
Cob  
Reverse Transfer Capacitance  
Collector-to-Emitter Saturation Voltage  
Base-to-Emitter Saturation Voltage  
Collector-to-Base Breakdown Voltage  
Collector-to-Emitter Breakdown Voltage  
Emitter-to-Base Breakdown Voltage  
Cre  
VCE(sat)  
VBE(sat)  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
-1.0  
-1  
V
-200  
-200  
-3  
V
V
IC=-1mA, RBE=  
IE=-100ìA, IC=0  
V
hFE Classification  
Rank  
hFE  
D
E
F
60 to 120  
100 to 200  
160 to 320  
http://www.twtysemi.com  
2 of 2  
sales@twtysemi.com  
4008-318-123