SMD Type
Transistors
IC
Product specification
2SA1813
Features
Very small-sized package.
Adoption of FBET process.
High DC current gain (h
FE
=500 to 1200).
Low collector-to-emitter saturation voltage
(V
CE(sat)
0.3V).
15V).
1 Emitter
2 Base
3 Collector
High V
EBO
(V
EBO
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Base current
Collector dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
-30
-25
-15
-150
-300
-30
200
150
-55 to +150
Unit
V
V
V
mA
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Common base output capacitance
Collector-to-emitter saturation voltage
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Symbol
Ic
BO
I
EBO
h
FE
f
T
Cob
Testconditons
V
CB
= -20V , I
E
= 0
V
EB
= -10V , I
C
= 0
V
CE
= -5V , I
C
= -1mA
V
CE
= -10V , I
C
= -10mA
V
CB
= -10V , f = 1MHz
500
800
210
2.6
-0.15
-0.78
-30
-25
-15
-0.3
-1.1
Min
Typ
Max
-0.1
-0.1
1200
MHz
pF
mV
V
V
V
V
Unit
ìA
ìA
V
CE(sat)
I
C
= -50mA , I
B
=-1mA
V
BE(sat)
I
C
= -50mA , I
B
=-1mA
V
(BR)CBO
I
C
= -10ìA , I
E
= 0
V
(BR)CEO
V
(BR)EBO
I
C
= -1mA , R
BE
=
I
E
= -10ìA , I
C
= 0
Marking
Marking
KS
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
