Product specification
2SA1766
Features
Adoption of FBET, MBIT processes.
High DC current gain (h
FE
=500 to 1200).
Large current capacity.
Low collector-to-emitter saturation voltage.
High V
EBO
.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Base current
Collector dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
-30
-25
-15
-300
-500
-60
1.3
150
-55 to +150
Unit
V
V
V
mA
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Common base output capacitance
Collector-to-emitter saturation voltage
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Symbol
Ic
BO
I
EBO
h
FE
f
T
Cob
Testconditons
V
CB
= -20V , I
E
= 0
V
EB
= -10V , I
C
= 0
V
CE
= -5V , I
C
= -10mA
V
CE
= -10V , I
C
= -10mA
V
CB
= -10V , f = 1MHz
500
800
100
12
-0.12
-0.77
-30
-25
-15
-0.5
-1.1
Min
Typ
Max
-0.1
-0.1
1200
MHz
pF
V
V
V
V
V
Unit
ìA
ìA
V
CE(sat)
I
C
= -200mA , I
B
=-4mA
V
BE(sat)
I
C
= -200A , I
B
=-4mA
V
(BR)CBO
I
C
= -10ìA , I
E
= 0
V
(BR)CEO
I
C
= -1mA , R
BE
=
V
(BR)EBO
I
E
= -10ìA , I
C
= 0
Marking
Marking
AL
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TYSEMI [ TY Semiconductor Co., Ltd ]
