SMD Type
Product specification
2SA1740
Features
High Breakdown Voltage
Adoption of MBIT Process
Excellent h
FE
Linearlity.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Power Dissipation
Jumction temperature
Storage temperature Range
* Mounted on ceramic board (250 mm
2
x 0.8 mm)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C *
T
j
T
stg
Rating
-400
-400
-5
-200
-400
1.3
150
-55 to +150
Unit
V
V
V
mA
mA
W
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Gain-Bandwidth Product
Collector Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
I
CBO
I
EBO
Testconditons
V
CB
= -300V , I
E
= 0
V
EB
= -4V , I
C
= 0
-400
-400
-5
60
200
-0.8
-1.0
70
5
4
0.25
5.0
V
V
MHz
pF
pF
ìs
Min
Typ
Max
-0.1
-0.1
Unit
A
A
V
V
V
V
(BR)CBO
I
C
= -10uA , I
E
= 0
V
(BR)CEO
I
C
= -1mA , R
BE
=
V
(BR)EBO
I
E
= -10uA , I
C
= 0
h
FE
V
CE
= -10V , I
C
= -50mA
V
CE(sat)
I
C
= -50mA , I
B
= -5mA
V
BE(sat)
I
C
= -50mA , I
B
= -5mA
f
T
C
ob
C
re
t
on
t
off
V
CE
= -30V , I
C
= -10mA
V
CB
= -30V , I
E
= 0 , f = 1MHz
V
CB
= -30V , I
E
= 0 , f = 1MHz
See Test Circuit.
1
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sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
