Product specification
2SA1664
Features
Collector current I
C
=-0.8A
Power dissipation P
C
=0.5W
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
-35
-30
-5
-0.8
0.5
150
-55 to +150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-base cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base emitter voltage
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
Testconditons
I
C
= -1mA, I
E
= 0
I
C
= -10 mA, I
B
= 0
I
E
= -1mA, I
C
= 0
V
CB
= -35 V, I
E
= 0
V
EB
=-5V,I
C
=0
V
CE
= -1V, I
C
= -100 mA
V
CE
= -1 V, I
C
= -700 mA
V
CE(sat)
I
C
= -500 mA, I
B
= -20 mA
V
BE
C
ob
f
T
V
CE
=-1V,I
C
=-10mA
V
CB
= -10V, I
E
= 0, f = 1 MHz
V
CE
= -5V, I
C
=-10mA
-0.5
120
19
100
35
-0.7
-0.8
V
V
MHz
pF
Min
-35
-30
-5
-0.1
-0.1
320
Typ
Max
Unit
V
V
V
A
A
h
FE
Classification
Marking
Rank
h
FE
100
RO
O
200
160
RY
Y
320
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 1
TYSEMI [ TY Semiconductor Co., Ltd ]
