Product specification
2SA1587
Features
High voltage VCEO=-120V
High hFE hFE=200 to 700
Low noise
Small package
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Emitter-base voltage
Collector-emitter voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
EBO
V
CEO
I
C
I
B
P
C
Tj
T
stg
Rating
-120
-120
-5
-100
-20
100
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
NF
Testconditons
V
CB
= -120 V, I
E
= 0
V
EB
= -5 V, I
C
= 0
V
CE
= -6 V, I
C
= -2 mA
I
C
= -10 mA, I
B
= -1 mA
V
CE
= -6 V, I
E
= 1 mA
V
CB
= -10 V, I
E
= 0, f = 1 MHz
V
CE
=-6 V, I
C
=-0.1 mA, f=1 kHz,R
g
=10KÙ
100
4
1.0
10
200
Min
Typ
Max
-0.1
-0.1
700
0.3
V
MHz
pF
dB
Unit
ìA
ìA
h
FE
Classification
Marking
Rank
hFE
CG
GR
200 400
CL
BL
350 700
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TYSEMI [ TY Semiconductor Co., Ltd ]
