Product specification
2SA1532
Features
High transition frequency f
T
.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
-30
-20
-5
-30
150
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Base-emitter saturation voltage
Collector-base cutoff current
Collector-emitter cutoff current
Emitter-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise voltage
Reverse transfer impedance
Common-emitter reverse transfer capacitance
Symbol
V
BE
I
CBO
I
CEO
I
EBO
h
FE
Testconditons
V
CE
= -10 ìA, I
C
= -1 mA
V
CB
= -10 V, I
E
= 0
V
CE
= -20 V, I
B
= 0
V
EB
= -5 V, I
C
= 0
V
CB
= -10 V, I
E
= 1 mA
50
-0.1
150
300
2.8
22
1.2
4.0
60
2.0
Min
Typ
-0.7
-0.1
-100
-10
220
V
MHz
dB
Ù
pF
Max
Unit
V
ìA
ìA
ìA
V
CE(sat)
I
C
= -10 mA, I
B
= -1 mA
f
T
NF
Z
rb
C
re
V
CB
= -10 V, I
E
= 1 mA, f = 200 MHz
V
CB
= -10 V, I
E
= 1 mA, f = 5 MHz
V
CB
= -10 V, I
E
= 1 mA, f = 2 MHz
V
CB
= -10 V, I
E
= 1 mA, f = 10.7 MHz
h
FE
Classification
Marking
Rank
h
FE
A
50 100
E
B
70 140
C
110 220
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 1
TYSEMI [ TY Semiconductor Co., Ltd ]
