SMD Type
SMD Type
Product specification
2SA1415
Features
Adoption of FBET Process
High Breakdown Voltage (V
CEO
= 160V)
Excellent Linearlity of h
FE
and Small C
ob
Fast Switching Speed
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Power Dissipation
Jumction temperature
Storage temperature Range
* Mounted on ceramic board (250 mm
2
x 0.8 mm)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C *
T
j
T
stg
Rating
-180
-160
-5
-140
-200
500
1.3
150
-55 to +150
Unit
V
V
V
mA
mA
mW
W
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Gain-Bandwidth Product
Collector Output Capacitance
Turn-On Time
Storage Time
Fall Time
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= -80V , I
E
= 0
V
EB
= -4V , I
C
= 0
V
CE
= -5V , I
C
= -10mA
100
-0.14
150
4
0.1
See Test Circuit.
1.5
0.1
ìs
Min
Typ
Max
-100
-100
400
-0.4
V
MHz
pF
Unit
nA
nA
V
CE(sat)
I
C
= -50mA , I
B
= -5mA
f
T
C
ob
t
on
t
stg
t
f
V
CE
= -10V , I
C
= -10mA
V
CB
= -10V , I
E
= 0 , f = 1MHz
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 3
TYSEMI [ TY Semiconductor Co., Ltd ]
