Product specification
2SA1400-Z
TO-252
+0.15
1.50
-0.15
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
Features
High Voltage: V
CEO
=-400V
+0.2
9.70
-0.2
6.50
+0.2
5.30
-0.2
+0.15
-0.15
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse) *1
Total power Dissipation (Ta=25
Junction Tmeperature
Storage Temperature
*1 pw 300ìs,Duty Cycle 10%
*2 When mounted on ceramic substrate of 7.5cm
2
X0.7mm
) *2
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
T
T
j
T
stg
Rating
-400
-400
-7
-0.5
-1
2
150
-55 to 150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain*
Collector Saturation Voltage *
Base Saturation Voltage *
Turn-on Time
Storage Time
Fall time
* PW
350ìs,Duty Cycle 2%
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
t
on
t
stg
t
f
Testconditons
V
CB
=-400V,I
E
=0
V
EB
=-5V,I
C
=0
V
CE
=-5V,I
C
=-50mA
I
C
=-100mA,I
B
=-10mA
I
C
=-100mA,I
B
=-10mA
I
C
=-100mA,R
L
=1.5KÙ
I
B1
=-I
B2
=-10mA,V
CC
=-150V
PW
50ìs,Duty Cycle 2%
30
Min
Typ
Max
-100
-10
200
-1
-1.2
1
5
1
ìs
V
V
Unit
ìA
V
h
FE
Classification
Marking
hFE
N
30 to 60
M
40 to 80
L
60 to 120
K
100 to 200
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
3
.8
0
High speed:tr 1.0ìs
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TYSEMI [ TY Semiconductor Co., Ltd ]
