SMD Type
Transistors
Product specification
2SA1385-Z
TO-252
+0.15
1.50
-0.15
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
6.50
+0.2
5.30
-0.2
+0.15
-0.15
Features
Low V
CE(sat)
:V
CE(sat)
=-0.18 V TYP.
+0.2
9.70
-0.2
+0.15
5.55
-0.15
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current pulse *
Total power dissipation
Junction temperature
Storage temperature
* PW
10ms, duty cycle 50%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Rating
-60
-60
-7
-5
-7
10
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Turn-on time
Storage time
Fall time
* PW
350ìs, duty cycle 2%.
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= -50 V, I
E
= 0
V
EB
= -7 V, I
C
= 0
V
CE
= -1 V, I
C
= -2 A
100
200
-0.18
Min
Typ
Max
-10
-10
400
-0.3
-1.2
140
0.08
I
C
= -2 A,I
B1
=-I
B2
= -0.2 A, R
L
=50Ù,
V
CC
=-10V
0.55
0.18
1.0
2.5
1.0
V
V
MHz
ìs
ìs
ìs
Unit
ìA
ìA
V
CE(sat)
I
C
= -2 A, I
B
= -0.2 A
V
BE(sat)
I
C
= -2 A, I
B
= -0.2 A
f
T
t
on
t
stg
t
f
V
CE
= -10 V, I
C
= -0.5 A
h
FE
Classification
Marking
hFE
100
M
200
160
L
320
200
K
400
3
.8
0
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TYSEMI [ TY Semiconductor Co., Ltd ]
