Product specification
2SA1179
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
Features
+0.1
2.4
-0.1
+0.1
1.3
-0.1
High breakdown voltage
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
-55
-50
-5
-150
200
150
-50 to 150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current Gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
Testconditons
I
C
= -10ìA , I
E
= 0A
I
C
= -1mA , R
BE
=
I
E
= -10ìA , I
C
= 0A
V
CB
= -35V , I
E
= 0A
V
EB
= -4V , I
C
= 0
V
CE
= -6V , I
C
= -1mA
200
Min
-55
-50
-5
-0.1
-0.1
400
-0.5
-1.0
4.0
180
V
V
pF
MHz
Typ
Max
Unit
V
V
V
A
A
V
CE(sat)
I
C
= -50mA , I
B
= -5mA
V
BE(sat)
I
C
= -50mA , I
B
= -5mA
C
ob
f
T
V
CB
= -6V , I
E
=0 ,f = 1MHz
V
CE
= -6V , I
C
= -10mA
Marking
Marking
M
0-0.1
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TYSEMI [ TY Semiconductor Co., Ltd ]
