Product specification
2PD1820A
Features
High current (max. 500 mA).
Low voltage (max. 50 V).
Low collector-emitter saturation voltage (max. 600 mV).
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Peak base current
Total power dissipation
Storage temperature
Junction temperature
Operating ambient temperature
Thermal resistance from junction to ambient
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
R
th j-a
Rating
60
50
5
500
1
200
200
-65 to +150
150
-65 to +150
625
K/W
Unit
V
V
V
mA
A
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Symbol
I
CBO
Testconditons
I
E
= 0; V
CB
= 20 V
I
E
= 0; V
CB
= 20 V; T
j
= 150
Emitter cut-off current
DC current gain
2PD1820AQ
2PD1820AR
2PD1820AS
Collector-emitter saturation voltage
Collector capacitance
Transition frequency
* Pulse test: tp
300 ìs; ä
0.02.
I
EBO
I
C
= 0; V
EB
= 4 V
85
120
170
Min
Typ
Max
10
5
10
170
240
340
600
15
150
mV
pF
MHz
Unit
nA
ìA
nA
h
FE
I
C
= 150 mA; V
CE
= 10 V; *
V
CE(sat)
I
C
= 300 mA; I
B
= 30 mA; *
C
c
f
T
I
E
= ie = 0; V
CB
= 10 V; f = 1 MHz
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz;*
h
FE
Classification
TYPE
Marking
2PD1820AQ
AQ
2PD1820AR
AR
2PD1820AS
AS
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
