Product specification
2N7000
SOT-23
Unit: mm
■
Features
●
High density cell design for low R
DS(ON)
+0.1
2.4
-0.1
+0.1
2.9
-0.1
+0.1
0.4
-0.1
●
Rugged and reliable
●
High saturation current capability
1
2
+0.1
1.3
-0.1
●
Voltage controlled small signal switch
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
1.Base
+0.1
-0.1
1.Gate
+0.1
0.38
-0.1
0-0.1
2.Emitter
2.Soruce
3.Drain
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed Note(1)
Power dissipation
@ T
A
= 25℃
Symbol
V
DS
V
GS
I
D
P
D
T
J
, T
stg
Rating
60
±20
200
500
0.4
-55 to +150
W
℃
Unit
V
V
mA
Operating and storage junction temperature range
Notes: 1. Pulse width limited by maximum junction temperature.
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-source breakdown voltage
Gate-threshold voltage
Gate-body leakage
Zero gate voltage drain current
On-state drain current
Drain-source on-resistance
Forward tran conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on Time
Turn-off Time
Symbol
V
(BR)DSS
V
GS(th)
l
GSS
I
DSS
I
D(ON)
R
DS(on)
g
ts
C
iss
C
oss
C
rss
t
d(on)
t
d(off)
V
DD
= 15 V, R
L
= 25 Ω
I
D
=0.5 A, V
GEN
= 10 V, R
G
= 25Ω
V
DS
=25 V, V
GS
=0 V, f=1 MHz
Test conditons
V
GS
=0 V, I
D
=10
μA
V
DS
=V
GS
, I
D
=1mA
V
DS
=0 V, V
GS
=±20 V
V
DS
=48 V, V
GS
=0 V
T
C
= 125℃
V
GS
=4.5 V, V
DS
=10 V
V
GS
=10 V, I
D
=500 mA
V
GS
=4.5 V, I
D
=75 mA
V
DS
=10 V, I
D
=200 mA
100
22
11
2
60
25
5
10
10
ns
ns
pF
0.35
Min
60
0.8
2.1
3
±100
1
1000
0.075
5
5.3
ms
nA
μA
μA
A
Ω
Typ
Max
Unit
V
■
Marking
Marking
702
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sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
