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2N60 参数 Datasheet PDF下载

2N60图片预览
型号: 2N60
PDF下载: 下载PDF文件 查看货源
内容描述: RDS(ON) = 3.8 VGS = 10V。低栅极电荷(典型值9.0 NC) 。低的Crss (典型值5.0 pF的) 。 [RDS(ON) = 3.8 VGS = 10V. Low gate charge ( typical 9.0 nC). Low Crss ( typical 5.0 pF).]
分类和应用: 栅极
文件页数/大小: 2 页 / 250 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
 浏览型号2N60的Datasheet PDF文件第2页  
DIP Type
SMD
Type
Type
MOSFET
IC
Product specification
2N60
Features
R
DS(ON)
= 3.8 @V
GS
= 10V.
Low gate charge ( typical 9.0 nC).
Low Crss ( typical 5.0 pF).
Fast switching capability.
Avalanche energy specified
Improved dv/dt capability.
TO-220
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous (T
C
= 25 )
-----------------
Continuous (T
C
= 100 )
Drain Current - Pulsed * 1
Single Pulsed Avalanche Energy * 2
Avalanche Current * 1
Repetitive Avalanche Energy * 1
Peak Diode Recovery dv/dt * 3
Power Dissipation (T
C
= 25 )
--------
Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes,1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
V
DSS
V
GSS
I
D
I
DP
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
stg
T
L
R
èJC
R
èJA
Rating
600
30
2.0
1.26
8.0
140
2.0
4.5
4.5
44
0.36
-55 to +150
300
4
54
/W
/W
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/
* 1. Repetitive Rating : Pulse width limited by maximum junction temperature.
* 2. L = 64mH, I
AS
= 2.0A, V
DD
= 50V, R
G
= 25 , Starting T
J
= 25
* 3. I
SD
2.4A, di/dt
200A/µs, V
DD
BV
DSS
, Starting T
J
= 25
http://www.twtysemi.com
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4008-318-123
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