DIP Type
SMD
Type
Type
MOSFET
IC
Product specification
2N60
Features
R
DS(ON)
= 3.8 @V
GS
= 10V.
Low gate charge ( typical 9.0 nC).
Low Crss ( typical 5.0 pF).
Fast switching capability.
Avalanche energy specified
Improved dv/dt capability.
TO-220
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous (T
C
= 25 )
-----------------
Continuous (T
C
= 100 )
Drain Current - Pulsed * 1
Single Pulsed Avalanche Energy * 2
Avalanche Current * 1
Repetitive Avalanche Energy * 1
Peak Diode Recovery dv/dt * 3
Power Dissipation (T
C
= 25 )
--------
Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes,1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
V
DSS
V
GSS
I
D
I
DP
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
stg
T
L
R
èJC
R
èJA
Rating
600
30
2.0
1.26
8.0
140
2.0
4.5
4.5
44
0.36
-55 to +150
300
4
54
/W
/W
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/
* 1. Repetitive Rating : Pulse width limited by maximum junction temperature.
* 2. L = 64mH, I
AS
= 2.0A, V
DD
= 50V, R
G
= 25 , Starting T
J
= 25
* 3. I
SD
2.4A, di/dt
200A/µs, V
DD
BV
DSS
, Starting T
J
= 25
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 2