DIP
Type
SMD Type
SMD
Type
Transistor
IC
Transistors
Product specification
2N5551
Features
Switching and amplification in high voltage
Applications such as telephony
Low current(max. 600mA)
High voltage(max.180V)
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-continuous
Collector Power Dissipation
Junction and storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
T
J
, T
stg
Rating
180
160
6
0.6
625
-55 to +150
Unit
V
V
V
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
Testconditons
I
C
= 100 ìA, I
E
= 0
I
C
= 1.0 mA, I
B
= 0
I
E
= 10 ìA, I
C
= 0
V
CB
= 120 V, I
E
= 0
V
EB
= 4.0 V, I
C
= 0
I
C
= 1.0 mA, V
CE
= 5 V
DC current gain *
h
FE
I
C
= 10 mA, V
CE
= 5 V
I
C
= 50 mA, V
CE
= 5 V
Collector-emitter saturation voltage *
V
CE(sat)
I
C
= 10 mA, I
B
= 1 mA
I
C
= 50 mA, I
B
= 5mA
Base-emitter saturation voltage *
Transiston frequency
Collector output capacitance
Input capacitance
Noise figure
* Pulse Test: Pulse Width = 300
V
BE(sat)
f
T
C
ob
C
ib
NF
s, Duty Cycle=2.0%.
I
C
= 10 mA, I
B
= 1 mA
I
C
=50 mA, I
B
= 5 mA
V
CE
=10V,I
C
=10mA,f=100MHz
V
CB
=10V,I
E
=0,f=1MHz
V
BE
=0.5V,I
C
=0,f=1MHz
V
CE
=5V,I
c
=0.25mA,f=10Hz to
15.7KHz,R
s
=1k
100
80
80
30
0.15
0.2
1.0
1.0
300
6
20
8
MHz
pF
pF
dB
V
V
250
Min
180
160
6
50
50
Typ
Max
Unit
V
V
V
nA
nA
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sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
