DIP
Type
SMD Type
SMD
Type
DIP Type
Transistor
IC
Transistors
Product specification
2N5401
TO-92
■
Features
●
Switching and amplification in high voltage
●
Applications such as telephony
●
Low current(max. 600mA)
●
High voltage(max.150V)
1
2 3
1. Emitter
2. Base
3. Collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-continuous
Collector Power Dissipation
Junction and storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
T
J
, T
stg
Rating
-160
-150
-5
-600
625
-55 to +150
Unit
V
V
V
mA
mW
℃
■
Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Symbol
Test conditions
Min
-160
-150
-5
-50
-50
50
60
50
-0.5
-1.0
100
300
V
V
MHz
240
Typ
Max
Unit
V
V
V
nA
nA
V
(BR)CBO
I
C
= -100
μA,
I
E
= 0
V
(BR)CEO
I
C
=- 1.0 mA, I
B
= 0
V
(BR)EBO
I
E
= -10
μA,
I
C
= 0
I
CBO
I
EBO
V
CB
=- 120 V, I
E
= 0
V
EB
= -3.0 V, I
C
= 0
I
C
= -1.0 mA, V
CE
= -5 V
DC current gain
h
FE
I
C
= -10 mA, V
CE
= -5 V
I
C
= -50 mA, V
CE
= -5 V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transiston frequency
V
CE(sat)
I
C
= -50 mA, I
B
= -5.0 mA
V
BE(sat)
I
C
= -50 mA, I
B
= -5.0 mA
f
T
V
CE
=-5V,I
C
=-10mA,f=30MHz
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TYSEMI [ TY Semiconductor Co., Ltd ]
