Product specification
2N3906
Features
PNP silicon epitaxial planar transistor for switching and
Amplifier applications
1 EMITTER
2 BASE
3 COLLECTOR
Absolute Maximum Ratings Ta = 25
Parameter
Collector- Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current- Continuous
Collector Dissipation
Junction and Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
stg
Rating
-40
-40
-5
-0.2
0.625
-55 to 150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector - base breakdown voltage
Collector - emitter breakdown voltage
Emitter- base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
CBO
V
CEO
V
EBO
Ic
BO
Ic
EO
I
EBO
Ic= -100 ìA
Ic= -1 mA
I
E
= -100 ìA
Testconditons
I
E
=0
I
B
=0
I
C
=0
Min
-40
-40
-5
-0.1
-50
-0.1
100
60
30
-0.4
-0.95
35
35
225
75
250
MHz
ns
V
V
ns
400
Typ
Max
Unit
V
V
V
ìA
nA
ìA
V
CB
= -40 V , I
E
=0
V
CE
= -40 V , V
BE(off)
=-3V
V
EB
= -5V , I
C
=0
V
CE
= -1V, I
C
= -10mA
DC current gain
h
FE
V
CE
= -1V, I
C
= -50mA
V
CE
= -1V, I
C
= -100mA
Collector- emitter saturation voltage
Base - emitter saturation voltage
Delay time
Rise time
Storage time
Fall time
Transition frequency
V
CE(sat)
I
C
=-50 mA, I
B
= -5mA
V
BE(sat)
I
C
=-50 mA, I
B
= -5mA
t
d
t
r
t
s
t
f
f
T
V
CC
=-3.0V,V
BE
=0.5V
I
C
=-10mA,I
B1
=-1.0mA
V
CC
=-3.0V,I
C
=-10mA
I
B1
=I
B2
=-1.0mA
V
CE
= -20V, I
C
= -10mA, f=100MHz
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