Product specification
1SS383
SOT-343
Unit: mm
Features
Composed of 2 independent diodes.
Low forward voltage: V
F (3)
= 0.54V (typ.)
Low reverse current: I
R
= 5
A (max)
Absolute M axim um R atings T a = 25
P aram eter
M axim um (peak) reverse voltage
R everse voltage
M axim um (peak) forward current
A verage forward current
S urge current (10 m s)
P ower dissipation
Junction tem perature
S torage tem perature range
O perating tem perature range
N ote
1.U nit R ating.Total R ating = U nit R ating
1.5
S ym bol
V
R
M
R ating
85
80
300
(1)
100
(1)
2
(1)
150
125
-55 to +125
-40 to +100
U nit
V
V
mA
mA
A
mW
V
R
I
F M
I
O
I
F SM
P
T
j
T
stg
T
opr
Electrical C haracteristics T a = 25
P aram eter
S ym bol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
R everse current
Total capacitance
I
R
C
T
C onditions
I
F
= 1 m A
I
F
= 10 m A
I
F
= 100 m A
V
R
= 40 V
V
R
=0 V ,f=1 M H z
18
M in
Typ
0.28
0.36
0.54
0.60
5
25
A
pF
V
M ax
U nit
Marking
Marking
A4
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TYSEMI [ TY Semiconductor Co., Ltd ]
