Product specification
1SS375
Features
Series connection of 2 elements in a very small-sized package facilitates high-density
mounting and permits 1SS375-applied equipment to be made smaller.
Small interterminal capacitance.
Low forward voltage.
High breakdown voltage.
Absolute M axim um Ratings Ta = 25
Param eter
Reverse Voltage
Forward Current
Junction Tem perature
Storage tem perature
Sym bol
V
R
I
F
T
j
T
stg
Value
10
35
125
-55 to +125
Unit
V
mA
Electrical Characteristics Ta = 25
Parameter
Forward Voltage
Forward Current
Reverse Current
Interterminal Capacitance
Forward Voltage Difference
Interterminal Capacitance Difference
Symbol
V
F(1)
V
F(2)
I
F
I
R(1)
I
R(2)
C
V
F
C
Conditions
I
F
= 1 mA
I
F
= 10 mA
V
F
= 1 V
V
R
= 2 V
V
R
= 10 V
V
R
= 0 V, f = 1 MHz
I
F
= 10 mA
V
R
= 0 V, f = 1 MHz
Min
350
480
35
0.2
A
10
0.85
10
0.1
pF
mV
pF
Typ
Max
420
580
mA
Unit
mV
Marking
Marking
FH
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TYSEMI [ TY Semiconductor Co., Ltd ]
