Product specification
1N525
2B
■
Features
●
500mW Power Dissipation
●
High Stability
●
Surface Mount Equivalents Available
DO-35
1.0 2(26.0)
MIN.
0.079(2.0)
MAX
0.157 (4.0)
MAX
1.0 2(26.0)
MIN.
0.024(0.60)
MAX
Dimensions in inches and (millimeters)
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Power Dissipation
Forward Voltage at I
F
= 200 mA
Thermal Resistance Junction to Ambient Air (note 1)
Junction temperature
Storage temperature range
(note 1)
Symbol
P
D
V
F
R
θJA
T
j
T
stg
Rating
500
1.1
300
175
-55 to +175
Unit
mW
V
℃
/W
℃
℃
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
■
Electrical Characteristics Ta = 25℃
Zener Voltage
(Note 2)
Device
Min (V)
1N5252B
22.80
V
Z
@ I
ZT
Nom (V)
24.0
Max (V)
23.20
Test
Current
I
ZT
mA
5.2
Maximum Zener
Impedance
Z
ZT
@ I
ZT
Ω
33
Z
ZK
@ I
ZK
=
0.25mA
Ω
600
μA
0.1
Maximum Reverse
Current
I
R
@ V
R
V
18
Notes: 2. Based on dc measurement at thermal equilibrium; lead length = 9.5mm (3/8”); thermal resistance of heat sink = 30℃/W.
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TYSEMI [ TY Semiconductor Co., Ltd ]
