Product specification
1N4150W
SOD-123
+0.1
2.7
-0.1
Unit: mm
+0.05
1.1
-0.05
+0.1
0.55
-0.1
Features
Silicon Epitaxial Planar Diode
Fast general purpose and switching.
This diods is also available in other case styles including:
the DO-35 case with the type designation 1N4150 and
the Mini-MELF case with the type disignation LL4150.
0.50
+0.1
3.7
-0.1
0.1max
0.35
Absolute Maximum Ratings Ta = 25
Paramater
Peak Reverse voktage
Maximum Average Rectified Current
Maximum Power Dissipation at Tamb = 25
Maximum Forward Voltage Drop at I
F
= 200mA
Maximum Reverse Current at V
R
= 50 V
Maximum Reverse Recovery Time at I
F
= 10 to 200 mA, to 0.1 I
F
Maximum Junction Temperature
Storage Temperature Range
NOTES::
(1) Valid provided that electrodes are kept at ambient temperature
Symbol
V
RM
Io
P
tot
V
F
I
R
T
rr
T
j
Ts
Value
50
200
410
(1)
1.0
100
4.0
150
-65 to+150
Unit
V
mA
mW
V
nA
ns
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
+0.05
0.1
-0.02
1 of 1
+0.1
1.6
-0.1
TYSEMI [ TY Semiconductor Co., Ltd ]
