Product specification
1N4148
DO-35
■
Features
●
Fast Switching Speed
●
General Purpose Rectification
●
Silicon Epitaxial Planar Construction
0.079(2.0)
MAX
1.0 2(26.0)
MIN.
0.157 (4.0)
MAX
1.0 2(26.0)
MIN.
0.024(0.60)
MAX
Dimensions in inches and (millimeters)
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current *
Average Rectified Output Current *
Non-Repetitive Peak Forward Surge Current @ t = 1.0ìs
@ t = 1.0s
Power Dissipation *
Derate Above 25℃
Thermal Resistance Junction to Ambient Air *
Operating and Storage Temperature Range
R
èJA
T
j
,T
STG
P
D
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
53
300
150
2.0
1.0
500
1.68
300
-65 to +175
V
mA
mA
A
A
mW
mW/℃
K/W
℃
75
V
Rating
100
Unit
V
* Valid provided that device terminals are kept at ambient temperature.
■
Electrical Characteristics Ta = 25℃
Parameter
Forward voltage
Symbol
V
F
I
F
=10mA
V
R
= 75 V
Peak Reverse Current
I
R
V
R
= 20 V, T
j
= 150
℃
V
R
= 20V
Capacitance
Reverse recovery time
C
J
t
rr
V
R
= 0,f=1.0MHz
I
F
= 10 mA I
R
= 1 mA, V
R
= 6 V, R
L
= 100 Ù
Testconditons
Min
Typ
Max
1.0
5
30
25
4.0
4.0
Unit
V
μA
μA
nA
pF
ns
■
Marking
Marking
1N4148
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 2
TYSEMI [ TY Semiconductor Co., Ltd ]
