SS32
THRU
SS310
3.0 AMPS. Surface Mount Schottky Barrier Rectifiers
Voltage Range
20 to 100 Volts
Current
3.0 Amperes
Features
For surface mounted application
Metal to silicon rectifier, majority carrier conduction
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
High temperature soldering:
260
o
C / 10 seconds at terminals
SMC/DO-214AB
.129(3.27)
.118(3.0)
.245(6.22)
.220(5.59)
.280(7.11)
.260(6.60)
.012(.31)
.006(.15)
Mechanical Data
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packaging: 16mm tape per EIA STD RS-481
Weight: 0.21 gram
.103(2.62)
.079(2.00)
.060(1.52)
.030(0.76)
.320(8.13)
.305(7.75)
.008(.20)
.004(.10)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
SS
SS
SS
SS
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
L
(See Fig. 1)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
(Note 1) @ 3.0A
Maximum DC Reverse Current @ T
A
=25℃
at Rated DC Blocking Voltage @ T
A
=100℃
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
32
20
14
20
33
30
21
30
34
40
28
40
35
50
35
50
3.0
100
SS
36
60
42
60
SS
39
90
63
90
SS
310
100
70
100
Units
V
V
V
A
A
0.5
0.5
20
0.75
0.85
0.6
20
V
mA
mA
℃/W
℃/W
℃
℃
10.0
R
θ
JL
17
Typical Thermal Resistance ( Note 2 )
55
R
θ
JA
Operating Temperature Range
T
J
-55 to +125
-55 to +150
Storage Temperature Range
T
STG
-55 to +150
Notes
:
1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.6 x 0.6”(16 x 16mm) Copper Pad Areas.
- 56 -
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
