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MMBT3906_10 参数 Datasheet PDF下载

MMBT3906_10图片预览
型号: MMBT3906_10
PDF下载: 下载PDF文件 查看货源
内容描述: 为350mW , PNP小信号晶体管 [350mW, PNP Small Signal Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 377 K
品牌: TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
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MMBT3906
350mW, PNP Small Signal Transistor
Small Signal Diode
SOT-23
3 Collector
A
F
1 Base
2 Emitter
B
E
Features
Epitaxial planar die construction
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
C
D
G
Mechanical Data
Case : SOT- 23 small outline plastic package
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Weight : 0.008gram (approximately)
Marking Code : 2A
Dimensions
A
B
C
D
E
F
G
Unit (mm)
Min
2.70
1.20
0.30
1.78
2.20
0.95
Max
3.10
1.65
0.50
2.04
3.00
1.40
Unit (inch)
Min
0.106
0.047
0.012
0.070
0.087
0.037
Max
0.122
0.065
0.020
0.080
0.118
0.055
0.550 REF
0.022 REF
Ordering Information
Package
Part No.
Packing
3K / 7" Reel
3K / 7" Reel
Marking
2A
2A
SOT-23 MMBT3906 RF
SOT-23 MMBT3906 RFG
Suggested PAD Layout
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Thermal resistance junction-ambient
Junction and Storage Temperature Range
Symbol
P
D
V
CBO
V
CEO
V
EBO
I
C
R
thJA
T
J
, T
STG
Value
350
-40
-40
-5
-200
357
-55 to + 150
Units
mW
V
V
V
mA
°C/W
°C
Notes:1. Valid provided that electrodes are kept at ambient temperature
Version : C10